June 1, 2011

intel processor roadmap 2013

According to Intel, Nehalem-C will be succeeded by Gusher, the third generation, called NGMA3. Intel has hinted that will make use of the tri-gate transistor technology in its processors to 32 or 22 nm. Since 1950 the project has a strictly planar transistors with gates that are positioned in a plane through the substrate. The project is a tri-gate single gate is placed on two vertical gate allowing a three times greater for the movement of electrons. However if we see this technology in Gusher or derivatives to 22 nm yet we have no certainty.

However, the U.S. company does not stop there, and has plans for after the Gushers and its derivatives to 22 nm. A technology that aims to replace the tri-gate is one that uses carbon Nan tubes to silicon coated with a metal gate to increase even more the available space. Intel is in the laboratories experimenting with carbon Nan tubes with a diameter of 1.4 nm to see if it can be a material for future transistors, and if you will, we will see in 2013.

We summarize the main points of the post-Core / Conroe:
- Intel unify the architecture of its processors - no more derivatives Merom / Conroe / Woodcrest. The processor core that will be used in servers will be what you see in notebooks.
- Parallel Design - The team working on Nehalem is already working on 45nm processors. Penury is a project in between Core and Nehalem, already in development. The same thing will happen with Nehalem and Gushers.
- P1266, Penury, and the next chip will use radically different manufacturing techniques - High-k Dielectrics, metal gate electrode, and with Nehalem-C will be passed by DUV lithography at 193 nm EUV lithography at 13.4nm.